Model: OMS1085

Photo Semiconductor Device

Special Features:

Base lead 0.05 in. Max.; internal junction configuration: npn

Properties:

Inclosure Material
Metal and glass
Overall Length
Between 0.225 inches and 0.255 inches
Terminal Length
0.500 inches
Overall Diameter
Between 0.209 inches and 0.230 inches
Function For Which Designed
Phototransistor and amplifier
End Application
Aegis
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-18
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Gallium arsenide
Voltage Rating In Volts Per Characteristic
25.0 collector to base voltage/static/emitter open and 25.0 collector to emitter voltage/static/base open and 5.0 emitter to collector voltage, dc
Current Rating Per Characteristic
50.00 milliamperes peak forward surge current and 100.00 nanoamperes repetitive peak forward current peak
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Test Data Document
53711-5366069 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-272-8944
Part Number
OMS1085
Description
Semiconductor Device,photo
CAGE
32694

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part OMS1085 NSN 5961-01-272-8944

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
39
LVL_A:
Q
LVL_B:
Q

Pricing & Availability Check

Submit this form for stock availability and pricing.
Part Number:
Quantity:
Email Address:
Phone Number:
Your Name:
Company:



Privacy Policy    Terms & Conditions

How to Order  

Ordering from buyaircraftparts.com

If you would like to order this photo semiconductor device (NSN 5961-01-272-8944) please submit the pricing and availability form above to receive an up to date quote by email. If you agree to the pricing and terms you can e-sign your order online!

We are pleased to have the opportunity to serve you.

Have a Question

Hours: 08:00-18:00 Eastern Standard Time
Phone: +1 470-231-0824
Email: Contact Form »
Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

Highest Rated Parts
Recently Purchased Parts
Hot Parts