Model: NTE5404

Thyristor Semiconductor Device

Special Features:

Sensitive gate to-92 package; halfwave unidirectional gate controlled rectifier (scr thyristor)

Properties:

Inclosure Material
Plastic
Overall Length
0.210 inches
Overall Diameter
0.205 inches
Function For Which Designed
Rectifier
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 repetitive peak reverse voltage and 200.0 repetitive peak off-state voltage
Current Rating Per Characteristic
5.00 milliamperes forward current, total rms peak and 0.80 amperes forward current, total rms horsepower metric
NSN
5961-01-425-0420
Part Number
NTE5404
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part NTE5404 NSN 5961-01-425-0420

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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