Description:

0.270 inches overall height, 0.230 inches overall diameter, gallium arsenide phosphide semiconductor material, visible light source; plastic body; max power dissipation at 25 deg c is 180 mw; m 55 to p 100 deg c operating .

Special Features:

Visible light source; plastic body; max power dissipation at 25 degrees c is 180 mw; m 55 to p 100 degrees c operating and storage temp range

Properties:

A two electrode, solid state, optoelectronic device that emits visible or infrared radiant energy when electrically energized. May or may not include mounting hardware and/or heat sink. Excludes lamp, cartridge; and light, indicator. For solid state devices which are responsive to infrared or radiant energy, see semiconductor device (1), photo.