Model: MSC-80321

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Height
Between 0.149 inches and 0.187 inches
Overall Diameter
Between 0.165 inches and 0.185 inches
Function For Which Designed
Microwave
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 collector to base voltage/static/emitter open and 18.0 breakdown voltage, collector to emitter, sustained and 3.5 emitter to base voltage, static, collector open
Current Rating Per Characteristic
0.50 milliamperes zero-gate-voltage source current preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-114-4273
Part Number
MSC-80321
Description
Transistor
CAGE
32421

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part MSC-80321 NSN 5961-01-114-4273

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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