Model: MSBJ2K3.3

Diode Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.235 inches and 0.255 inches
Overall Height
Between 0.077 inches and 0.104 inches
Overall Width
Between 0.130 inches and 0.155 inches
Mounting Facility Quantity
2
Mounting Method
Terminal
Voltage Rating In Volts Per Characteristic
4.6 breakdown voltage, dc
Current Rating Per Characteristic
50.0 milliamperes breakover current, dc and 10.0 amperes peak pulse current
Power Rating Per Characteristic
2000.0 watts peak pulse output power
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
NSN
5961-01-610-9624
Part Number
MSBJ2K3.3
Description
Semiconductor Device,diode
CAGE
14552

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MSBJ2K3.3 NSN 5961-01-610-9624

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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