Model: MMSZ3V9

Diode Semiconductor Device

Properties:

Overall Length
Between 3.7 millimeters and 3.9 millimeters
Overall Height
1.1 millimeters
Overall Width
1.6 millimeters
Function For Which Designed
Zener diode
Mounting Method
Terminal
Voltage Rating In Volts Per Characteristic
3.9 breakdown voltage, collector-to-base, emitter open nanoamperes
Power Rating Per Characteristic
500.0 milliwatts total power dissipation
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-576-8761
Part Number
MMSZ3V9
Description
Semiconductor Device,diode
CAGE
59PE1

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part MMSZ3V9 NSN 5961-01-576-8761

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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