Model: JANTX1N6660

Diode Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
Between 50.42 millimeters and 51.69 millimeters
Overall Height
Between 6.32 millimeters and 6.60 millimeters
Overall Width
Between 13.59 millimeters and 13.89 millimeters
Function For Which Designed
Rectifier
Mounting Facility Quantity
1
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
45.0 reverse voltage, average
Current Rating Per Characteristic
15.00 amperes drain current megahertz
Capacitance Rating In Picofarads
2000.0
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-518-4431
Part Number
JANTX1N6660
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N6660 NSN 5961-01-518-4431

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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