Model: JANTX1N6467US

Diode Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
Between 5.08 millimeters and 5.72 millimeters
Overall Height
Between 3.48 millimeters and 3.76 millimeters
Overall Width
Between 3.48 millimeters and 3.76 millimeters
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
43.7 breakdown voltage, dc
Current Rating Per Characteristic
46.00 milliamperes collector current, dc major
Power Rating Per Characteristic
500.0 watts forward power dissipation, dc pascal
NSN
5961-01-515-0313
Part Number
JANTX1N6467US
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N6467US NSN 5961-01-515-0313

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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