Model: JANTX1N6463US

Diode Semiconductor Device

Properties:

Overall Length
Between 0.200 inches and 0.225 inches
Overall Diameter
Between 0.137 inches and 0.148 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
13.6 breakdown voltage, dc and 12.0 working peak reverse voltage
Current Rating Per Characteristic
80.00 amperes forward current, average preset
Power Rating Per Characteristic
2.5 watts small-signal input power, common-collector major
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-532-7865
Part Number
JANTX1N6463US
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N6463US NSN 5961-01-532-7865

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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