Model: JANTX1N5809US

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 0.200 inches and 0.225 inches
Overall Height
Between 0.137 inches and 0.148 inches
Overall Width
Between 0.137 inches and 0.148 inches
End Application
E-3 block 404
Mounting Method
Press fit
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 reverse voltage, peak
Current Rating Per Characteristic
125.00 amperes peak forward surge current
Part Name Assigned By Controlling Agency
Mil spec: semiconductor device, diode, silicon, ultrafast recovery, power rectifier, type jantx1n5809us
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-597-1327
Part Number
JANTX1N5809US
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JANTX1N5809US NSN 5961-01-597-1327

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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