Model: JAN1N2812B

Diode Semiconductor Device

Special Features:

Same as 1n2812b but with different quality level

Properties:

Inclosure Material
Metal
Overall Length
0.410 inches
Overall Diameter
1.325 inches
End Application
6625-15-064-3505 test set electronics systems x925-501
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
14.0 regulator voltage
Current Rating Per Characteristic
890.00 milliamperes repetitive peak forward current
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
Terminal Type And Quantity
2 pin
NSN
5961-01-469-0535
Part Number
JAN1N2812B
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JAN1N2812B NSN 5961-01-469-0535

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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