Model: IRFF120

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.260 inches
Terminal Length
0.500 inches
Overall Diameter
0.350 inches
End Application
6940-01-158-2742 transmitting se
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-39
Mounting Method
Terminal
Terminal Circle Diameter
0.210 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 breakdown voltage, dc
Current Rating Per Characteristic
6000.00 amperes drain current
Power Rating Per Characteristic
20.0 watts total power dissipation
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-243-6305
Part Number
IRFF120
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRFF120 NSN 5961-01-243-6305

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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