Model: IRF9150
TransistorSpecial Features:
Single pulse avalanche energy related; soa is power dissipation limited; nanosecond switching speeds; linear transfer characteristics; high input impedance; -25 to -100v; p-channel enhancement mode gate power field effect transistor
Properties:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Part IRF9150 NSN 5961-01-594-7973
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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