Model: H378731
Semiconductor Device AssemblySpecial Features:
Launched power min 60 uw, center wavelength min 1290 max 1350 nm, spectral width max 170 nm, forward voltage max 1.65 v, leakage current max 100 ua, capacitance max 280 pf, rise/fall time max 4.0 ns
Properties:
A grouping of two or more semiconducting devices such as light emitting diode; semiconductor device, diode; semiconductor device, photo; semiconductor device, thyristor; and/or transistor mounted on a common mounting or mounted on each other. The devices must be separable and each item must be capable of functioning in accordance with its given name. For assemblies consisting of semiconducting devices permanently cased, encapsulated, or potted together to form a single unit, see rectifier, semiconductor device, unitized and semiconductor devices, unitized. Excludes semiconductor device set; microcircuit assembly; and microcircuit set. See also absorber, overvoltage.
Part H378731 NSN 5961-01-545-0417
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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