Model: FDS3890

Diode Semiconductor Device

Special Features:

Operating/storage temperature: -55deg c to +175deg c

Properties:

End Application
V-22 aircraft, aircraft, osprey v-22a, marine corps
Voltage Rating In Volts Per Characteristic
80.0 drain supply voltage and 80.0 source supply voltage
Current Rating Per Characteristic
4.7 amperes drain current and 20.0 amperes peak pulse current
Power Rating Per Characteristic
2.0 watts on-state power dissipation
Part Name Assigned By Controlling Agency
Fds3890- 80v n-channel dual power trench mosfet
NSN
5961-01-645-1470
Part Number
FDS3890
Description
Semiconductor Device,diode
CAGE
89305

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part FDS3890 NSN 5961-01-645-1470

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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