Model: F956
U Semiconductor Device RectifierSpecial Features:
Single phase bridge; encapsulated in epoxy; 1.375 in. Max dia; 10 kc square wave application; m50.0 to p125.0 degrees c operating temp; storage temp range: m50.0 to p150.0 degrees celsius
Properties:
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Part F956 NSN 5961-01-055-8176
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541900000
- SITC: 77688
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diode, transistor & similar semiconductor device parts
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