Special Features:

Silicon full wave bridge rectifier; 15 amp; bridge designed to operate at high current levels; 1.500 in. Lg by 1.500 in. W; 2 mtg holes 0.140 in. Inside diameter spaced 1.312 in. center to center; m65 degrees c to p175 degrees c operating temp; peak reverse voltages up to 600 volts required

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.