Model: DMEG250

Transistor

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.896 inches
Overall Height
0.184 inches
Overall Width
0.800 inches
End Application
Distance measuring equipment (dme)
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
4.0 breakdown voltage, emitter-to-base, collector open and 50.0 collector supply voltage and 55.0 breakdown voltage, collector-to-emitter, with base short-circuited to emitter
Current Rating Per Characteristic
30.00 amperes source cutoff current
Power Rating Per Characteristic
875.0 watts small-signal input power, common-collector preset
Terminal Type And Quantity
2 ribbon
NSN
5961-01-244-3798
Part Number
DMEG250
Description
Transistor
CAGE
08125

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part DMEG250 NSN 5961-01-244-3798

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
N

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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