Model: BZG04-11

Diode Semiconductor Device

Special Features:

Junction temperature: 150 degrees c; storage temp. Range: m65/p150 degrees c; junction capacitance: 850 pf; glass passivated junction; stand-off voltage range: 8.2 v to 200.0 v; lead-free component; aprrox. Weight: 77 mg

Properties:

Overall Length
5.5 millimeters
Overall Height
2.3 millimeters
Overall Width
2.8 millimeters
End Application
Combined system interim acc-rpc-sfp
Voltage Rating In Volts Per Characteristic
12.4 breakdown voltage, dc and 1.2 forward voltage, dc
Current Rating Per Characteristic
50.00 amperes peak forward surge current
NSN
5961-01-580-2331
Part Number
BZG04-11
Description
Semiconductor Device,diode
CAGE
17856

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part BZG04-11 NSN 5961-01-580-2331

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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