Model: BCP56T1G

Transistor

Special Features:

Housed in sot-223 package; pb free; marking bh; npn silicon epitaxial transistor; high current 1a; surface mount

Properties:

Inclosure Material
Glass
Overall Length
7.000 inches
Function For Which Designed
Amplifier
End Application
Vhf/fm-fh; audio amplifiers
Mounting Facility Quantity
4
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Slot
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
40.0 collector to emitter saturation voltage
Current Rating Per Characteristic
1.00 amperes all primaries
Power Rating Per Characteristic
1.5 watts any acceptable absolute
Transfer Ratio
40.0 small-signal short-circuit forward current transfer ratio, common-emitter and 250.0 small-signal short-circuit forward current transfer ratio, common-emitter
Part Name Assigned By Controlling Agency
Bipolar epitaxial transistor
Terminal Type And Quantity
3 tab, solder lug and 1 case
NSN
5961-01-568-1484
Part Number
BCP56T1G
Description
Transistor
CAGE
1NQ07

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BCP56T1G NSN 5961-01-568-1484

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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