Model: BCP53T1G

Transistor

Special Features:

Lead-free

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.249 inches and 0.263 inches
Overall Height
Between 0.060 inches and 0.068 inches
Overall Width
Between 0.130 inches and 0.145 inches
Internal Configuration
Junction contact-double base
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-261
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
-80.0 collector to emitter voltage/static/base open
Current Rating Per Characteristic
1.50 amperes source cutoff current
Power Rating Per Characteristic
1.5 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Terminal Type And Quantity
4 pin
NSN
5961-01-568-3194
Part Number
BCP53T1G
Description
Transistor
CAGE
1MQ07

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part BCP53T1G NSN 5961-01-568-3194

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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