Model: 6H11200009A

Transistor

Special Features:

Junction pattern arrangement: npn; body height: 0.510 in. Max

Properties:

Overall Length
0.730 inches
Terminal Length
0.250 inches
Overall Width
0.620 inches
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
120.00 breakdown voltage, collector-to-base, emitter open and 120.0 breakdown voltage, collector-to-emitter, base open and 5.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
1.00 amperes base current, dc and 40.00 amperes collector current, dc
Power Rating Per Characteristic
200.0 watts total device dissipation
Transfer Ratio
200.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Terminal Type And Quantity
3 pin
NSN
5961-01-580-2845
Part Number
6H11200009A
Description
Transistor
CAGE
19710

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 6H11200009A NSN 5961-01-580-2845

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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