Special Features:

3-phase rectifier assembly; operating ambient temp range m65 degrees c to p150 degrees c; common cathode and 3 anode inputs; 60 hz resistive and inductive loading; peak working reverse voltage 600v; output current 10a; terminals nickel or tin plated; hermetically sealed; 0.161 in. Max diameter two holes; 1.197 in. Length between mtg facility; height 0.950 in. Max

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.