Model: 2N6341

Transistor

Properties:

Inclosure Material
Metal
Overall Length
1.531 inches
Overall Height
0.350 inches
Overall Width
1.050 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Internal Junction Configuration
Npn
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
25.00 amperes zero-gate-voltage source current blank
Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
Transfer Ratio
30.0 static forward current transfer ratio, common-emitter and 120.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Terminal Type And Quantity
1 case and 2 pin
NSN
5961-01-112-4728
Part Number
2N6341
Description
Transistor
CAGE
07688

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6341 NSN 5961-01-112-4728

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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