Model: 2N5090

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.300 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.440 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
35.0 collector to base voltage/static/emitter open and 55.0 collector to emitter reverse voltage and 3.5 emitter to base voltage, static, collector open
Current Rating Per Characteristic
20.00 microamperes zero-gate-voltage source current absolute
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
3 pin
NSN
5961-00-469-5785
Part Number
2N5090
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5090 NSN 5961-00-469-5785

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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