Model: 2N174

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.520 inches
Terminal Length
0.710 inches
Overall Diameter
1.250 inches
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-36
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
80.0 breakdown voltage, collector-to-base, emitter open and 60.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
15.00 milliamperes source cutoff current and 4.00 milliamperes source cutoff current
Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
Transfer Ratio
50.0 static forward current transfer ratio, common-emitter
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-00-225-9986
Part Number
2N174
Description
Transistor
CAGE
01537

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N174 NSN 5961-00-225-9986

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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