Model: 1N6659LTXV

Unitized Semiconductor Devices

Properties:

Inclosure Material
Ceramic
Overall Length
0.890 inches
Overall Height
0.560 inches
Overall Width
0.545 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-254aa
Response Time
35.0 nanoseconds all light emitting diode
Component Name And Quantity
2 semiconductor device diode
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon all light emitting diode
Voltage Rating In Volts Per Characteristic
200.0 working peak reverse voltage all light emitting diode
Current Rating Per Characteristic
40.00 amperes forward current, average absolute all light emitting diode and 400.00 amperes forward current, average preset all light emitting diode
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Precious Material And Location
Plated leads gold
Precious Material
Gold
Test Data Document
35351-171280 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity
3 pin
NSN
5961-01-414-4330
Part Number
1N6659LTXV
Description
Semiconductor Devices,unitized
CAGE
30043

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 1N6659LTXV NSN 5961-01-414-4330

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
A
ESD:
A
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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