Model: 13-4545-1

Thyristor Semiconductor Device

Special Features:

Junction pattern arrangement: pnpn

Properties:

Inclosure Material
Metal
Overall Length
1.040 inches
Overall Diameter
2.250 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Press fit
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
1600.0 repetitive peak reverse voltage
Current Rating Per Characteristic
350.00 amperes forward current, total rms universal
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
2 uninsulated wire lead w/terminal lug and 1 case
NSN
5961-01-078-8500
Part Number
13-4545-1
Description
Semiconductor Device,thyristor
CAGE
51053

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 13-4545-1 NSN 5961-01-078-8500

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
D
ESD:
D
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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