Model: 110-507-8

Thyristor Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
0.210 inches
Terminal Length
0.500 inches
Overall Diameter
0.205 inches
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 repetitive peak off-state voltage
Current Rating Per Characteristic
800.00 amperes drain current pascal
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-019-8772
Part Number
110-507-8
Description
Semiconductor Device,thyristor
CAGE
04845

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 110-507-8 NSN 5961-01-019-8772

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
N

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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