Model: TX1N2975B

Diode Semiconductor Device
Description:

Metal inclosure material, 1.253 inches overall length, 0.505 inches overall diameter, 1 mounting facility quantity, anode electrode internally-electrically connected to case.

Properties:

Inclosure Material
Metal
Overall Length
1.253 inches
Overall Diameter
0.505 inches
Mounting Facility Quantity
1
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Threaded stud
Overall Width Across Flats
Between 0.423 inches and 0.438 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
11.0 regulator voltage
Voltage Tolerance In Percent
-5.0/+5.0
Current Rating Per Characteristic
210.00 milliamperes source cutoff current horsepower metric
Power Rating Per Characteristic
10.0 watts total power dissipation
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Precious Material And Location
Terminal surface option silver or gold
Precious Material
Gold or silver
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
Specification Data
81349-mil-s-19500/124 government specification
NSN
5961-00-001-2913
Part Number
TX1N2975B
Description
Semiconductor Device,diode
CAGE

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part TX1N2975B NSN 5961-00-001-2913

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
V
ESD:
A
ESD:
A
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

Pricing and AvailabilitySend your request for price using this form to get a quote by email.

1Contact & Email
2Product

How to Order  

Ordering from buyaircraftparts.com

If you would like to order this spacing threaded standoff (NSN 5961-00-001-2913) please submit the pricing and availability form above to receive an up to date quote by email. If you agree to the pricing and terms you can e-sign your order online!

We are pleased to have the opportunity to serve you.

Have a Question

Hours: 08:00-18:00 Eastern Standard Time
Phone: +1 470-231-0824
Email: Contact Form »

New Products Recently updated in semiconductor devices and associated hardware

  • JANTX2N3250 transistor
    NSN 5961-00-009-8025

    Metal inclosure material, 0.210 inches overall length, 0.750 inches terminal length, 0.195 inches overall diameter, junction contact internal configuration

  • JAN1N4996 diode semiconductor device
    NSN 5961-00-009-8071

    Glass inclosure material, 0.175 inches overall length, 0.145 inches overall diameter, terminal mounting method, hermetically sealed case features provided

  • 851856 unitized semiconductor devices
    NSN 5961-00-009-8093

    Metal inclosure material, 0.260 inches overall length, 1.500 inches terminal length, 0.370 inches overall diameter, to-5 joint electronic device engineering council/jedec/case outline designation

  • DF08M u semiconductor device rectifier
    NSN 5961-00-009-8094

    F-16 aircraft. B-1 aircraft support equipment. Ballistic missle early warning system (bmews) . End item identification, bridge 1 phase circuit connection style

  • 6357-3 diode semiconductor device
    NSN 5961-00-009-8133

    Glass inclosure material, hermetically sealed case features provided, silicon semiconductor material, 2 uninsulated wire lead terminal type and quantity

  • SG1245 diode semiconductor device
    NSN 5961-00-009-8297

    Silicon semiconductor material

Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less