Model: SKKT323/12E
Unitized Semiconductor DevicesSpecial Features:
Electrically insulated base plate; heat transfer through aluminum oxide ceramic insulated metal base plate; chip soldered on direct copper bonded ai2o3 ceramic; thyristor with center gate
Properties:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
Part SKKT323/12E NSN 5961-01-641-4121
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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