Model: Q35-0002-001

Transistor

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Height
Between 0.125 inches and 0.165 inches
Overall Width
Between 0.175 inches and 0.205 inches
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-92
Mounting Method
Terminal
Features Provided
High frequency
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
-25.0 gate to source voltage
Current Rating Per Characteristic
10.00 milliamperes gate current
Power Rating Per Characteristic
350.0 milliwatts total device dissipation
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-492-2312
Part Number
Q35-0002-001
Description
Transistor
CAGE
14304

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part Q35-0002-001 NSN 5961-01-492-2312

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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