Special Features:

Wsilicon material; dip bridge; peak rep. Reverse voltage 600; rms reverse voltage 420; peak surge current 1/2 cycle; amps 25; dc fwd current, 1; junction oper. And stg. Temp range m50 to p150; max. Inst fwd. Voltage drop 1.2; max current 5.0

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.