Special Features:

High voltage diffused silicon power rectifier; peak reverse voltage 4.000v; average forward current at 40 degrees c 2 amps; max forward voltage drop at 25 degrees c 4v; o/a lg 3.000 in.; o/a w 1.000 in. Min; 2 tab solder lug terminals

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.