Model: VBE890-2N683

Thyristor Semiconductor Device
Description:

Metal inclosure material, 1.646 inches overall length, 1 mounting facility quantity, threaded stud mounting method, 0.544 inches overall width across flats.

Properties:

Inclosure Material
Metal
Overall Length
1.646 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Overall Width Across Flats
Between 0.544 inches and 0.563 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 repetitive peak reverse voltage and 150.0 nonrepetitive peak reverse voltage and 5.0 peak gate voltage
Current Rating Per Characteristic
16.00 amperes forward current, total rms megahertz and 150.00 amperes forward current, total rms watts
Current Rating Per Characteristic
16.00 amperes average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle and 150.00 amperes peak on-state surge current
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
Specification Data
81349-mil-prf-19500/108 government specification
NSN
5961-00-060-6817
Part Number
VBE890-2N683
Description
Semiconductor Device,thyristor
CAGE
H0203

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part VBE890-2N683 NSN 5961-00-060-6817

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
25.0000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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