Model: USD835

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Plastic
Overall Length
Between 1.060 inches and 1.187 inches
Overall Width
Between 0.380 inches and 0.420 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-220
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
35.0 reverse voltage, peak
Current Rating Per Characteristic
12.00 amperes source cutoff current preset
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-01-379-3130
Part Number
USD835
Description
Transistor
CAGE
12969

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part USD835 NSN 5961-01-379-3130

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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