Model: US1G
Diode Semiconductor DeviceSpecial Features:
Device marking code ug; max repetitive peak reverse voltage 400; max rms voltage 280; max dc blocking voltage 400; max average forward rectified current at tl =100 degrees c 1.0; peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 30; operating and storage temp range m55.0 to 150.0
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part US1G NSN 5961-01-485-0921
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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