Model: UF2805B

Transistor

Special Features:

N-channel enhancement mode device; 100-500 mhz; dmos structure; lower noise floor

Properties:

Overall Length
Between 0.815 inches and 0.825 inches
Overall Height
Between 0.580 inches and 0.600 inches
Overall Width
Between 0.144 inches and 0.170 inches
Function For Which Designed
General purpose
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Voltage Rating In Volts Per Characteristic
20.0 gate to source voltage and 65.0 drain to source voltage
Current Rating Per Characteristic
1.40 amperes drain current
Power Rating Per Characteristic
14.4 watts peak turn-off power dissipation
Part Name Assigned By Controlling Agency
Rf mosfet power transistor, 5w, 28v, 100-500 mhz
NSN
5961-01-579-5637
Part Number
UF2805B
Description
Transistor
CAGE
96341

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part UF2805B NSN 5961-01-579-5637

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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