Model: TS128MDR72V6S

Memory Microcircuit

Special Features:

Item is 128m x 72bits double data rate sdram high density for ddr266; item consists of 18 pcs cmos 128mx4 bits double dta rate sdrams in 60 ball fbga packages, 2pcs drive ic's for input control signal, 1pc pll, and a 2048 bits serial eeprom on a 184-pin printed circuit board

Properties:

End Application
Sdram high density
Inclosure Configuration
Dual-in-line
Output Logic Form
Complementary-metal oxide-semiconductor logic
Part Name Assigned By Controlling Agency
184 pin ddr266 1u registered dimm 1gb with 128mx4 cl2.5
NSN
5962-01-585-2214
Part Number
TS128MDR72V6S
Description
Microcircuit,memory
CAGE
1FXG7

A circuit designed to store information and/or coded instructions for later use. Item has pins or other connections to install in a computer or computing device. does not include magnetic drums, tapes, punched cards or the like. for items that have portable type connections see memory, portable, solid state.

Part TS128MDR72V6S NSN 5962-01-585-2214

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
41015
FIIG:
A458A0
Concept No.:
1
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8542900000
  • SITC: 77689
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Electronic integrated circuits and microassembly parts

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