Model: TIC126M

Thyristor Semiconductor Device

Special Features:

Junction pattern arrangement: pnpn

Properties:

Overall Length
0.705 inches
Overall Height
0.546 inches
Overall Width
0.400 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 repetitive peak reverse voltage
Current Rating Per Characteristic
12.00 amperes drain current universal
Power Rating Per Characteristic
1.0 watts any acceptable universal
Maximum Operating Tempurature Per Measurement Point
110.0 degrees celsius case
Terminal Type And Quantity
3 pin
NSN
5961-01-257-0513
Part Number
TIC126M
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part TIC126M NSN 5961-01-257-0513

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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