Model: TI1151

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.388 inches
Overall Height
0.385 inches
Overall Diameter
0.690 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
1.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
5.00 amperes all primaries
Power Rating Per Characteristic
80.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
1 wire hook and 2 tab, solder lug and 1 threaded stud
NSN
5961-00-267-5418
Part Number
TI1151
Description
Transistor
CAGE
01295

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part TI1151 NSN 5961-00-267-5418

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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