Model: T6416M

Thyristor Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
Between 0.330 inches and 0.505 inches
Overall Height
Between 0.544 inches and 0.562 inches
Overall Width
Between 0.544 inches and 0.562 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 repetitive peak off-state voltage
Current Rating Per Characteristic
40.00 amperes forward current, total rms horsepower metric
Maximum Operating Tempurature Per Measurement Point
85.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
2 solder stud and 1 threaded stud
NSN
5961-01-083-3360
Part Number
T6416M
Description
Semiconductor Device,thyristor
CAGE
34371

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part T6416M NSN 5961-01-083-3360

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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