Model: T6411M

Thyristor Semiconductor Device

Properties:

Overall Height
Between 0.330 inches and 0.505 inches
Overall Diameter
0.544 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Overall Width Across Flats
Between 0.544 inches and 0.562 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 off-state voltage, peak
Current Rating Per Characteristic
30.00 amperes forward current, total rms horsepower metric
Maximum Operating Tempurature Per Measurement Point
80.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
NSN
5961-01-086-9450
Part Number
T6411M
Description
Semiconductor Device,thyristor
CAGE
1MY79

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part T6411M NSN 5961-01-086-9450

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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