Model: T2301A

Thyristor Semiconductor Device

Special Features:

Gate sensitivity of 4 ma

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
1.500 inches
Overall Diameter
0.352 inches
Electrode Internally-electrically Connected To Case
Gate
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 working peak reverse voltage, peak total value, gate terminal open-circuited
Current Rating Per Characteristic
2.50 amperes forward current, total rms horsepower metric
Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius case
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-230-0084
Part Number
T2301A
Description
Semiconductor Device,thyristor
CAGE
1MY79

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part T2301A NSN 5961-01-230-0084

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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