Model: SZZD2.8-6.8-10.8-10
Diode Semiconductor DeviceSpecial Features:
Diode is a 5 amp - 580 watt bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 5.50 volts; max. Reverse leakage (ir) at vso is 600 microamps (limit is doubled when reverse breakdown voltage is 10 volts or less); max. Clamping voltage (vcl) 10.8 volts at peak pulse current (ipp) 53.0 amps
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part SZZD2.8-6.8-10.8-10 NSN 5961-01-476-2270
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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