Model: SZZD2.8-20-29.1-10

Diode Semiconductor Device

Special Features:

Diode is a 5 amp, 580 watt, bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 16.20 volts; max. Reverse leakage (ir) at vso is 1 microamp; max. Clamping voltage (vcl) 29.1 volts at peak pulse current (ipp) 17.5 amps

Properties:

Voltage Rating In Volts Per Characteristic
18.0 reverse breakdown voltage, instantaneous and 22.0 reverse breakdown voltage, instantaneous
Current Rating Per Characteristic
1.00 milliamperes drain current pascal
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Precious Material And Location
Plating gold
Precious Material
Gold
NSN
5961-01-476-2269
Part Number
SZZD2.8-20-29.1-10
Description
Semiconductor Device,diode
CAGE
0AEM1

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part SZZD2.8-20-29.1-10 NSN 5961-01-476-2269

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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