Model: SUP75N06-08

Transistor

Special Features:

N-channel 60-v (d-s), mosfet

Properties:

Mounting Facility Quantity
1
Mounting Method
Unthreaded hole
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 3.0 gate to source threshold voltage
Current Rating Per Characteristic
120.00 amperes collector current, instantaneous peak and 75.00 amperes reverse current, dc torr
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-564-3730
Part Number
SUP75N06-08
Description
Transistor
CAGE
18612

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part SUP75N06-08 NSN 5961-01-564-3730

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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