Model: STW8NB100
TransistorSpecial Features:
Extremly high dv/dt capability; 100 percent avalanche tested; very low intrinsic capacitances; gate charge minimized; +-30 v gate to source voltage rating
Properties:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Part STW8NB100 NSN 5961-01-573-7496
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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