Model: SRP600G
Diode Semiconductor DeviceSpecial Features:
Fast switching for high effeciency; low forward voltage drop; low leakage current; high forward current operation; high forward surge capability; solder dip 260 degrees c; component in accordance to rohs 2002/95/ec and weee 2002/96/ec; max repetitive peak reverse voltage is 400; max rms voltage is 280; max dc blocking voltage is 400
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part SRP600G NSN 5961-01-579-6615
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsFreight Classification
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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