Model: SIR424DP-T1-GE3

Transistor

Properties:

Inclosure Material
Plastic
Overall Length
6.15 millimeters
Overall Width
5.15 millimeters
End Application
V-22 aircraft
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 drain to source voltage
Current Rating Per Characteristic
30.0 amperes drain current
Power Rating Per Characteristic
41.7 watts forward power dissipation, dc
Part Name Assigned By Controlling Agency
Trans mosfet
Terminal Type And Quantity
8 bonding pad
NSN
5961-01-650-8928
Part Number
SIR424DP-T1-GE3
Description
Transistor
CAGE
91637

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part SIR424DP-T1-GE3 NSN 5961-01-650-8928

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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